Mathematical model of heat and mass transfer during crystal growth process including cluster model of a melt constitution

This article gives a brief analysis of current concepts about the processes of melt ordering and structural self-organization at the temperature close to melting point, including the interface area, when growing semiconductor single crystals. A mathematical model of convection mass transfer is proposed as an independent tool of exploration. This model includes the equations of hydrodynamics, impurity transfer, and convection flow in the interface in view of the medium cluster structure. For the first time, the melt structural model near the crystallization front considers the availability of cluster formations which cause resistance to the melt flow.