Evidence for and role of boron carbide icosahedra in the hardness of amorphous hydrogenated boron carbide

被引:8
作者
Braddock-Wilking, J [1 ]
Lin, SH
Feldman, BJ
机构
[1] Univ Missouri, Dept Phys, St Louis, MO 63121 USA
[2] Univ Missouri, Dept Phys, St Louis, MO 63121 USA
[3] Univ Missouri, Ctr Mol Elect, St Louis, MO 63121 USA
关键词
boron carbide icosahedra; infrared absorption; nuclear magnetic resonance; hardness; amorphous hydrogenated boron carbide;
D O I
10.1023/A:1019173120525
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
We report both infrared absorption and B-11 nuclear magnetic resonance measurements that provide evidence for the presence of boron carbide icosahedra in amorphous hydrogenated boron carbide (a-B:C:H) thin films. The infrared absorption spectra are dominated by a broad line at 1280 cm(-1) with a FWHM of 320 cm(-1), and the B-11 nuclear magnetic resonance spectra are dominated by a line with a chemical shift of 4 ppm and FWHM of 35 ppm; similar features have been previously reported in polycrystalline boron carbide, where boron carbide icosahedra make up the unit cell. We also suggest that it is these icosahedra that increase the hardness of these films over those films without boron, by playing the role of nanocrystals in a nanocrystal/amorphous matrix composite system.
引用
收藏
页码:145 / 148
页数:4
相关论文
共 14 条
[1]  
BROWN DW, 1995, SPRING MAT RES SOC M, P191
[2]   Formation of ultralow friction surface films on boron carbide [J].
Erdemir, A ;
Bindal, C ;
Fenske, GR .
APPLIED PHYSICS LETTERS, 1996, 68 (12) :1637-1639
[3]   CHARACTERIZATION OF BORON-CARBIDE THIN-FILMS FABRICATED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION FROM BORANES [J].
LEE, S ;
MAZUROWSKI, J ;
RAMSEYER, G ;
DOWBEN, PA .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) :4925-4933
[4]   THE PROPERTIES OF BORON-CARBIDE SILICON HETEROJUNCTION DIODES FABRICATED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].
LEE, SW ;
DOWBEN, PA .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (03) :223-227
[5]   Microhardness study of amorphous hydrogenated boron carbide deposited on a cathode substrate by plasma deposition [J].
Lin, SH ;
Feldman, BJ ;
Li, D .
APPLIED PHYSICS LETTERS, 1996, 69 (16) :2373-2375
[6]   DEPOSITION OF HYDROGENATED B-C THIN-FILMS AND THEIR MECHANICAL AND CHEMICAL CHARACTERIZATION [J].
ONATE, JI ;
GARCIA, A ;
BELLIDO, V ;
VIVIENTE, JL .
SURFACE & COATINGS TECHNOLOGY, 1991, 49 (1-3) :548-553
[7]  
STEIN H, 1991, AIP CONF PROC, V231, P322, DOI 10.1063/1.40844
[8]   DOPING VS ALLOYING IN AMORPHOUS HYDROGENATED BORON-CARBIDE [J].
SYLVESTER, B ;
LIN, SH ;
FELDMAN, BJ .
SOLID STATE COMMUNICATIONS, 1995, 93 (12) :969-971
[9]   SUPERHARD NANOCRYSTALLINE COMPOSITE-MATERIALS - THE TIN/SI3N4 SYSTEM [J].
VEPREK, S ;
REIPRICH, S ;
LI, SH .
APPLIED PHYSICS LETTERS, 1995, 66 (20) :2640-2642
[10]   LARGE-AREA BORON-CARBIDE PROTECTIVE COATINGS FOR CONTROLLED THERMONUCLEAR RESEARCH PREPARED BY INSITU PLASMA CVD [J].
VEPREK, S .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1992, 12 (03) :219-235