Optimization of QHE-devices for metrological applications

被引:23
作者
Jeckelmann, B [1 ]
Rüfenacht, A
Jeanneret, B
Overney, F
Pierz, K
von Campenhausen, A
Hein, G
机构
[1] Swiss Fed Off Metrol, CH-3003 Bern, Switzerland
[2] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
关键词
electrical quantum standards; integer quantum Hall effect; two-dimensional electron system;
D O I
10.1109/19.918106
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the framework of an European project aiming at the realization of a system for the calibration of capacitance standards based on the quantum Hall effect (QHE), optimized QHE: devices for the metrological application as de as well as ac standards of resistance are developed. The present paper describes the de characterization of a large number of devices with different layouts, contact configurations, carrier concentrations, and mobilities. The results demonstrate the influence of the device parameters on the critical current, the width of the quantized plateaus, the longitudinal voltages along the device and the quantized Hall resistance, Recommendations are given far the layout and mobility of QHE; devices in view of their use as dc standards of resistance.
引用
收藏
页码:218 / 222
页数:5
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