Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition

被引：36
作者：
Zhao, Jianguo [1 ]
Zhang, Xiong [1 ]
Dai, Qian [1 ]
Wang, Nan [1 ]
Wu, Zili [1 ]
Wang, Shuchang [2 ]
Cui, Yiping [1 ]
机构：
[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China
[2] Changshu Inst Technol, Coll Phys & Elect Engn, Changshu 215500, Jiangsu, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 01期
关键词：
PHASE EPITAXY; GAN GROWTH; NITRIDE; OVERGROWTH; FILMS;
D O I：
10.7567/APEX.10.011002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nonpolar a-plane AlGaN epi-layers were grown on a semi-polar r-plane sapphire substrate with an innovative two-way pulsed-flows metal organic chemical vapor deposition growth technology. A root-mean-square value of 1.79nm was achieved, and the relative light transmittance of the a-plane AlGaN epi-layer was enhanced by 36.9%. These results reveal that the innovative growth method is able to improve the surface morphology and reduce the defect density in nonpolar a-plane AlxGa1-xN epi-layers, particularly those with an Al composition greater than 0.5, which are key materials for the fabrication of nonpolar AlGaN-based high light emission efficiency deep-ultraviolet light-emitting diodes. (C) 2017 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 26 条
  • [11] Nonpolar a-GaN epilayers with reduced defect density using patterned r-plane sapphire substrates
    Kong, Bo Hyun
    Jung, Byung Oh.
    Cho, Hyung Koun
    Yoo, Geunho
    Nam, Okhyun
    [J]. THIN SOLID FILMS, 2013, 544 : 244 - 248
  • [12] Laskar M. R., ARXIV10064262
  • [13] High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers
    Laskar, Masihhur R.
    Ganguli, Tapas
    Hatui, Nirupam
    Rahman, A. A.
    Gokhale, M. R.
    Bhattacharya, Arnab
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 315 (01) : 208 - 210
  • [14] Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content
    Laskar, Masihhur R.
    Ganguli, Tapas
    Rahman, A. A.
    Mukherjee, Amlan
    Hatui, Nirupam
    Gokhale, M. R.
    Bhattacharya, Arnab
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (01)
  • [15] High-quality a-plane (11-20) GaN growth using double-lens structure on r-plane sapphire
    Min, Daehong
    Yoo, Geunho
    Moon, Seunghwan
    Kwak, Joonseop
    Kim, Hyeongjin
    Nam, Okhyun
    [J]. JOURNAL OF CRYSTAL GROWTH, 2014, 387 : 86 - 90
  • [16] Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
    Moram, M. A.
    Johnston, C. F.
    Kappers, M. J.
    Humphreys, C. J.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311 (12) : 3239 - 3242
  • [17] Optimization of (11(2)over-bar-0) a-plane GaN growth by MOCVD on (1(1)over-bar-02) r-plane sapphire
    Ni, X
    Fu, Y
    Moon, YT
    Biyikli, N
    Morkoç, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 290 (01) : 166 - 170
  • [18] Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates
    Okada, Narihito
    Tadatomo, Kazuyuki
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (02)
  • [19] STUDY OF DEFECT STATES IN GAN FILMS BY PHOTOCONDUCTIVITY MEASUREMENT
    QIU, CH
    HOGGATT, C
    MELTON, W
    LEKSONO, MW
    PANKOVE, JI
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (20) : 2712 - 2714
  • [20] Defect-related optical transitions in GaN
    Rieger, W
    Dimitrov, R
    Brunner, D
    Rohrer, E
    Ambacher, O
    Stutzmann, M
    [J]. PHYSICAL REVIEW B, 1996, 54 (24): : 17596 - 17602
123