Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition

被引：36

作者：

Zhao, Jianguo ^{[1
]}

Zhang, Xiong ^{[1
]}

Dai, Qian ^{[1
]}

Wang, Nan ^{[1
]}

Wu, Zili ^{[1
]}

Wang, Shuchang ^{[2
]}

Cui, Yiping ^{[1
]}

机构：

[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China

[2] Changshu Inst Technol, Coll Phys & Elect Engn, Changshu 215500, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 01期

关键词：

PHASE EPITAXY; GAN GROWTH; NITRIDE; OVERGROWTH; FILMS;

D O I：

10.7567/APEX.10.011002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar a-plane AlGaN epi-layers were grown on a semi-polar r-plane sapphire substrate with an innovative two-way pulsed-flows metal organic chemical vapor deposition growth technology. A root-mean-square value of 1.79nm was achieved, and the relative light transmittance of the a-plane AlGaN epi-layer was enhanced by 36.9%. These results reveal that the innovative growth method is able to improve the surface morphology and reduce the defect density in nonpolar a-plane AlxGa1-xN epi-layers, particularly those with an Al composition greater than 0.5, which are key materials for the fabrication of nonpolar AlGaN-based high light emission efficiency deep-ultraviolet light-emitting diodes. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

共 26 条

[1] Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode
Akiba, Masahiro
Hirayama, Hideki
Tomita, Yuji
Tsukada, Yusuke
Maeda, Noritoshi
Kamata, Norihiko
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 806 - 809
[2] Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells
Banal, Ryan G.
Taniyasu, Yoshitaka
Yamamoto, Hideki
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (05)
[3] Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask
Chakraborty, Arpan
Kim, K. C.
Wu, F.
Speck, J. S.
DenBaars, S. P.
Mishra, U. K.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (04)
[4] Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure
Deguchi, T
Sekiguchi, K
Nakamura, A
Sota, T
Matsuo, R
Chichibu, S
Nakamura, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (8B): : L914 - L916
[5] Defect reduction in (11(2)over-bar0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
Haskell, BA
Wu, F
Craven, MD
Matsuda, S
Fini, PT
Fujii, T
Fujito, K
DenBaars, SP
Speck, JS
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (04) : 644 - 646
[6] 222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
Hirayama, Hideki
Noguchi, Norimichi
Kamata, Norihiko
[J]. APPLIED PHYSICS EXPRESS, 2010, 3 (03)
[7] Growth and characterization of a-plane AlxGa1-xN alloys by metalorganic chemical vapor deposition
Huang, H. M.
Ling, S. C.
Chen, J. R.
Ko, T. S.
Li, J. C.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
[J]. JOURNAL OF CRYSTAL GROWTH, 2010, 312 (06) : 869 - 873
[8] Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy
Iida, Daisuke
Kawashima, Takeshi
Iwaya, Motoaki
Kamiyama, Satoshi
Amano, Hiroshi
Akasaki, Isamu
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1575 - 1578
[9] Properties of non-polar a-plane GaN/AlGaN quantum wells
Kappers, M. J.
Hollander, J. L.
Johnston, C. F.
McAleese, C.
Rao, D. V. Sridhara
Sanchez, A. M.
Humphreys, C. J.
Badcock, T. J.
Dawson, P.
[J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4983 - 4986
[10] III-nitride UV devices
Khan, MA
Shatalov, M
Maruska, HP
Wang, HM
Kuokstis, E
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7191 - 7206

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