The ALU+ Concept: N-Type Silicon Solar Cells With Surface-Passivated Screen-Printed Aluminum-Alloyed Rear Emitter

被引：14

作者：

Bock, Robert ^{[1
]}

Schmidt, Jan ^{[1
]}

Mau, Susanne ^{[1
]}

Hoex, Bram ^{[2
]}

Brendel, Rolf ^{[1
]}

机构：

[1] Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany

[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 08期

关键词：

Aluminium oxide; amorphus silicon; atomic layer deposition; emitter passivation; n-type silicon; passivation; photovoltaic cells; screen-printed emitter;

D O I：

10.1109/TED.2010.2050953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum-doped p-type (Al-p(+)) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p(+) emitter results in an emitter saturation current density J(0e) of 246 fA/cm(2), the Al2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm(2), which is the lowest J(0e) reported so far for screen-printed Al-doped p(+) emitters. Moreover, the Al2O3 as well as the Al2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900 degrees C. We implement our newly developed passivated Al-p(+) emitter into an n(+) np(+) solar cell structure, the so-called ALU(+) cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm(2), clearly demonstrating the high-efficiency potential of our ALU(+) cell concept.

引用

页码：1966 / 1971

页数：6

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