Electric charge transport anomalies in holmium and thulium thin films at low temperatures

被引：10

作者：

Dudás, J

Guzan, M

Gabáni, S

Kavecansky, V

Flachbart, K

Konc, M

Goscianska, I

机构：

[1] Tech Univ Kosice, Dept Theoret Electrotech & Elect Measurement, SK-04389 Kosice, Slovakia

[2] SAS, Inst Phys Expt, Kosice 04353, Slovakia

[3] Adam Mickiewicz Univ Poznan, Inst Phys, PL-61614 Poznan, Poland

[4] Safarik Univ, Fac Sci, Inst Phys, Kosice 04154, Slovakia

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 2004年 / 54卷

关键词：

electrical resistance; holmium and thulium thin films; low temperatures;

D O I：

10.1007/s10582-004-0076-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High-precision electrical resistance measurements were performed on holmium and thulium bulk and thin-film samples in the temperature range from 4.2 K up to room temperature. A "knee-like" resistance anomaly near the Neel temperature was observed in Ho bulk and thin-film samples. The X-ray diffraction of Ho films revealed diffraction peaks coming from the h.c.p. structure of Ho and those from holmium dihydride. Unexpected resistance anomalies were observed for thulium thin films in the temperature region below approximate to60 K and near approximate to170 K. The crystal structure study revealed diffraction peaks originating only from the Tm h.c.p. crystal structure.

引用

页码：D253 / D256

页数：4

共 10 条

[1] Electron transport properties of Ni and Cr thin films [J].