Layout Decomposition for Spacer-is-Metal (SIM) Self-Aligned Double Patterning

被引:0
作者
Fang, Shao-Yun [1 ]
Tai, Yi-Shu [2 ]
Chang, Yao-Wen [2 ,3 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
来源
2015 20TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC) | 2015年
关键词
LITHOGRAPHY;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Self-aligned double patterning (SADP) has become a preferred double patterning technology, due to its better overlay controllability. Two types of layout decomposition schemes are used to define two-dimensional layout patterns in SADP: Spacer-is-Metal (SIM) and Spacer-is-Dielectric (SID), and SIM-type layout decomposition typically has higher decomposition flexibility (especially for gridless designs). While SID-type layout decomposition has been studied extensively, however, only one previous work extended a satisfiability-based SID-type decomposer to SIM-type layout decomposition; this SAT-based method is inefficient for large-scale designs and not applicable to non-decomposable layouts. This paper introduces an efficient graph-based SIM-type layout decomposition heuristic. The decomposition problem is first transformed into a constrained set-covering problem. Then, an efficient algorithm composed of a greedy heuristic followed by a partition-based solution refinement scheme is proposed to simultaneously minimize the conflicts on both core masks and cut masks. Experimental results show that the algorithm can efficiently derive a good decomposition solution with minimized pattern conflicts.
引用
收藏
页码:671 / 676
页数:6
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[21]   Self-Aligned Metal Electrodes in Fully Roll-to-Roll Processed Organic Transistors [J].
Vilkman, Marja ;
Ruotsalainen, Teemu ;
Solehmainen, Kimmo ;
Jansson, Elina ;
Hiitola-Keinanen, Johanna .
ELECTRONICS, 2016, 5 (01)
[22]   Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography [J].
Oshima, Takayoshi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (01)
[23]   One step self-aligned multilayer patterning process for the fabrication of organic complementary circuits in combination with inkjet printing [J].
Li, Shunpu ;
Chen, Weining ;
Chu, Daping ;
Roy, Saibal .
ORGANIC ELECTRONICS, 2012, 13 (05) :737-743
[24]   Process development and edge-placement yield modeling of alternating-material self-aligned multiple patterning [J].
Han, Ting ;
Liu, Hongyi ;
Chen, Yijian .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2016, 15 (03)
[25]   Flexible 2D Layout Decomposition Framework for Spacer-Type Double Pattering Lithography [J].
Ban, Yongchan ;
Lucas, Kevin ;
Pan, David .
PROCEEDINGS OF THE 48TH ACM/EDAC/IEEE DESIGN AUTOMATION CONFERENCE (DAC), 2011, :789-794
[26]   Utilization of metal-polymer interactions for self-aligned directed self-assembly of device relevant features [J].
Dolejsi, Moshe ;
Nealey, Paul .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2018, 17 (03)
[27]   Utilization of metal-polymer interactions for self-aligned directed self-assembly of device relevant features [J].
Dolejsi, Moshe ;
Nealey, Paul .
ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXV, 2018, 10586
[28]   Application of Self-aligned Quadruple Patterning to Fabrication of Nanoimprint Mold with Sub-12-nm Half-pitch [J].
Suzuki, Kenta ;
Ueda, Tetsuya ;
Hiroshima, Hiroshi ;
Hayashi, Yoshihiro .
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2024, 37 (05) :475-480