BSIM-MG: A versatile multi-gate FET model for mixed-signal design

被引：31

作者：

Dunga, Mohan V. ^{[1
]}

Lin, Chung-Hsun ^{[1
]}

Lu, Darsen D. ^{[1
]}

Xiong, Weize ^{[2
]}

Cleavelin, C. R. ^{[2
]}

Patruno, P. ^{[3
]}

Hwang, Jiunn-Ren ^{[4
]}

Yang, Fu-Liang ^{[4
]}

Niknejad, Ali M. ^{[1
]}

Hul, Chenming ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Texas Instruments Inc, SiTD, Dallas, TX USA

[3] SOITECH SA, Bernin, France

[4] TSMC, Hsinchu, Taiwan

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MGFETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are infinity-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TOAD and experimental data.

引用

页码：60 / +

页数：2

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