Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method

被引:14
作者
Yamamoto, Takuya [1 ]
Adkar, Nikhil [1 ]
Okano, Yasunori [1 ]
Ujihara, Toru [2 ]
Dost, Sadik [3 ]
机构
[1] Osaka Univ, Dept Mat Engn Sci, Toyonaka, Osaka 5608531, Japan
[2] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Univ Victoria, Crystal Growth Lab, Victoria, BC V8W 3P6, Canada
关键词
Computer simulation; Fluid flows; Magnetic fields; Heat transfer; Top seeded solution growth; SEEDED SOLUTION GROWTH; CARBON TRANSPORT; SILICON; CONVECTION; CRYSTALS; MODEL;
D O I
10.1016/j.jcrysgro.2016.12.086
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A numerical simulation study was carried out to examine the transport phenomena occurring during the Top-Seeded Solution Growth (TSSG) process of SiC. The simulation model includes the contributions of radiative and conductive heat transfer in the furnace, mass transfer and fluid flow in the melt, and the induced electric and magnetic fields. Results show that the induced Lorentz force is dominant in the melt compared with that of buoyancy. At the relatively low coil frequencies, the effect of the Lorentz force on the melt flow is significant, and the corresponding flow patterns loose their axisymmetry and become almost fully disturbed. However, at the relatively higher frequency values, the flow is steady and the flow patterns remain axisymmetric.
引用
收藏
页码:50 / 54
页数:5
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