Chemistry of Wet Treatment of GaAs(111)B and GaAs(111)A in Hydrazine-Sulfide Solutions

被引：14

作者：

Berkovits, V. L. ^{[1
]}

Ulin, V. P. ^{[1
]}

Tereshchenko, O. E. ^{[2
]}

Paget, D. ^{[3
]}

Rowe, A. C. H. ^{[3
]}

Chiaradia, P. ^{[4
,5
]}

Doyle, B. P. ^{[6
,7
]}

Nannarone, S. ^{[6
,8
,9
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Novosibirsk State Univ, Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[4] Univ Roma Tor Vergata, CNISM Unit, Dipartimento Fis, I-00133 Rome, Italy

[5] Univ Roma Tor Vergata, NAST, I-00133 Rome, Italy

[6] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[7] Univ Johannesburg, ZA-2006 Auckland Pk, South Africa

[8] Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy

[9] CNISM, I-41100 Modena, Italy

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 03期

关键词：

MOLECULAR-BEAM EPITAXY; SURFACE PASSIVATION; GAAS-SURFACES; PHOTOEMISSION-SPECTROSCOPY; GAAS(100)-C(8X2) SURFACE; INDUCED NITRIDATION; PLASMA NITRIDATION; ATOMIC NITROGEN; CUBIC GAN; AMMONIA;

D O I：

10.1149/1.3529936

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Chemical treatment by hydrazine-sulfide solutions, known to produce surface nitridation of GaAs(100), was applied to GaAs(111) A and B surfaces. The chemistries of these treatments for the Ga-terminated A surface and the As-terminated B one were investigated using synchrotron radiation photoemission and Auger electron spectroscopies. For the B surface, such treatment was found to produce an effective surface nitridation, via substitution of surface arsenic with nitrogen atoms from hydrazine molecules. The process automatically stops after formation of one monolayer. In contrast, the A surface is covered by sulfur bonded to underlying gallium. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS(-) and OH(-) anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3529936] All rights reserved.

引用

页码：D127 / D135

页数：9

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