Raman Scattering Studies in Oxygen-vacancy Induced Ferromagnetism of Co-doped ZnO films

被引：2

作者：

Chen, Shijian ^{[1
]}

Suzuki, Kiyonori ^{[1
]}

机构：

[1] Monash Univ, Dept Mat Engn, Clayton, Vic 3800, Australia

来源：

PRICM 7, PTS 1-3 | 2010年 / 654-656卷

关键词：

Room-temperature ferromagnetism; ZnO films; Raman spectroscopy; THIN-FILMS; MAGNETIC SEMICONDUCTORS; OXIDE; FE;

D O I：

10.4028/www.scientific.net/MSF.654-656.1844

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zn(1-x)Co(x)O thin films (0 <= x <= 0.1) have been grown on Si (100) substrates by pulsed laser deposition. The as-prepared films showed paramagnetic characteristics at room temperature, while the films after annealing in a H(2) atmosphere exhibited clear ferromagnetic behaviors. Raman scattering has been used to study the influence of the post-deposition H(2) annealing on the structural properties and consequently on the magnetic properties of Co-doped ZnO films. It is found that the post-deposition annealing increases defect oxygen vacancies in the host lattice and induces an additional Raman vibration mode. The ferromagnetism of Zn(1-x)Co(x)O is believed to be strongly related to the oxygen deficiency in ZnO.

引用

页码：1844 / 1847

页数：4

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