A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications

被引:9
作者
Latry, O. [1 ]
Dherbecourt, P. [1 ]
Mourgues, K. [1 ]
Maanane, H. [2 ]
Sipma, J. P. [2 ]
Cornu, F. [2 ]
Eudeline, P. [2 ]
Masmoudi, M. [3 ]
机构
[1] Univ Rouen, GPM UMR CNRS 6634, F-76801 St Etienne, France
[2] THALES AIR SYST, F-76520 Ymare, France
[3] Univ Rouen, IUT, F-76821 Mont St Aignan, France
关键词
HOT-CARRIER RELIABILITY; N-LDMOS;
D O I
10.1016/j.microrel.2010.07.086
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear with no incidence on RF figures of merit (P-out or PAE). Robustness and ruggedness are shown for LDMOS with this bench for radar applications in L-band. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1574 / 1576
页数:3
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