A low quiescent current CV/CC parallel operation HBT power amplifier for W-CDMA terminals

被引：0

作者：

Shinjo, S ^{[1
]}

Mori, K

Ueda, H

Ohta, A

Seki, H

Suematsu, N

Takagi, T

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura, Kanagawa 2478501, Japan

[2] Mitsubishi Electr Corp, High Frequency & Opt Semicond Business Div, Itami, Hyogo 6648641, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 08期

关键词：

microwave; power amplifier; heterojunction bipolar transistor (HBT); inductor base feed; resistor base feed;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32 mA to 23 mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (P-out) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.

引用

页码：1444 / 1450

页数：7

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