Integrated 1.3-μm DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance

被引：11

作者：

Stegmueller, B ^{[1
]}

Hanke, C ^{[1
]}

机构：

[1] Infineon Technol AG, Corp Res, D-81739 Munich, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 08期

关键词：

distributed-feedback laser; electroabsorption modulator; monolithic integration; optical fiber communication; quantum-confined stark effect; quantum-well structures;

D O I：

10.1109/LPT.2003.815322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.31-mum electroabsorption modulators monolithically integrated with a DFB laser diode have been realized using an identical InGaAsP-InP multiple quantum-well-layer structure composed of two different QW types. Low laser threshold currents <13 mA and high 3-dBe cutoff frequency up to similar to25 GHz have been measured.

引用

页码：1029 / 1031

页数：3

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