Transient thermal measurement of laser diodes

被引:1
作者
Lee, CC [1 ]
Velasquez, J [1 ]
机构
[1] Univ Calif Irvine, Irvine, CA 92697 USA
来源
48TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 1998 PROCEEDINGS | 1998年
关键词
D O I
10.1109/ECTC.1998.678931
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this research, the transient thermal response of laser diodes is measured using light power as the temperature sensitive parameter. It is well known that the light power of a laser diode decreases as temperature increases. When the laser is driven by a long pulse signal, the light power decreases within the pulse duration as a result of temperature increase. From the percentage of light power decrease versus time, the temperature rise as a function of time is deduced. In determining the temperature rise, a calibration curve of power versus temperature is used. This curve is produced by measuring the peak light power of the laser driven by a short pulse over a range of case temperature. Under short pulse condition, the laser junction temperature is approximated by the case temperature since the junction does not have enough time to heat up. For the approximation to be valid, the short pulse width must be much shorter than the thermal time constant of the laser. Several commercial laser diodes are studied. In the experiment, the laser case temperature is measured by a thermal coupler-based digital thermometer with an accuracy of +/-0.1 degrees C. The accuracy is verified by boiling water and ice water temperatures.
引用
收藏
页码:1427 / 1430
页数:4
相关论文
共 50 条
[41]   Thermal condition of high-power laser diodes [J].
V. V. Bezotosnyi ;
O. N. Krokhin ;
V. A. Oleshchenko ;
V. F. Pevtsov ;
Yu. M. Popov ;
E. A. Cheshev .
Bulletin of the Lebedev Physics Institute, 2015, 42 :88-92
[42]   Thermal performance investigation of DQW GaInNAs laser diodes [J].
Lim, J. J. ;
MacKenzie, R. ;
Sujecki, S. ;
Sadeghi, M. ;
Wang, S. M. ;
Wei, Y. Q. ;
Larsson, A. ;
Melanen, P. ;
Uusimaa, P. ;
George, A. A. ;
Smowton, P. M. ;
Larkins, E. C. .
NUSOD '07: PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2007, :19-+
[43]   PSpice modeling of thermal performance in laser diodes packaging [J].
Zhou, Sheng ;
Zhang, Xiupu .
2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2006, :172-+
[44]   Thermal performance investigation of DQW GaInNAs laser diodes [J].
J. J. Lim ;
R. MacKenzie ;
S. Sujecki ;
M. Sadeghi ;
S. M. Wang ;
G. Adolfsson ;
Y. Q. Wei ;
A. Larsson ;
P. Melanen ;
P. Uusimaa ;
A. A. George ;
P. M. Smowton ;
E. C. Larkins .
Optical and Quantum Electronics, 2008, 40 :385-390
[45]   Thermal analysis of GaN laser diodes in a package structure [J].
Feng Mei-Xin ;
Zhang Shu-Ming ;
Jiang De-Sheng ;
Liu Jian-Ping ;
Wang Hui ;
Zeng Chang ;
Li Zeng-Cheng ;
Wang Huai-Bing ;
Wang Feng ;
Yang Hui .
CHINESE PHYSICS B, 2012, 21 (08)
[46]   THE MEASUREMENT OF THE TRANSIENT TEMPERATURE OF GAS BY LASER INTERFEROMETRY [J].
HAMAMOTO, Y ;
TOMITA, E ;
OKADA, T .
JSME INTERNATIONAL JOURNAL SERIES II-FLUIDS ENGINEERING HEAT TRANSFER POWER COMBUSTION THERMOPHYSICAL PROPERTIES, 1989, 32 (02) :247-251
[47]   Thermal performance investigation of DQW GaInNAs laser diodes [J].
Lim, J. J. ;
MacKenzie, R. ;
Sujecki, S. ;
Sadeghi, M. ;
Wang, S. M. ;
Adolfsson, G. ;
Wei, Y. Q. ;
Larsson, A. ;
Melanen, P. ;
Uusimaa, P. ;
George, A. A. ;
Smowton, P. M. ;
Larkins, E. C. .
OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (5-6) :385-390
[48]   Thermal condition of high-power laser diodes [J].
Bezotosnyi, V. V. ;
Krokhin, O. N. ;
Oleshchenko, V. A. ;
Pevtsov, V. F. ;
Popov, Yu. M. ;
Cheshev, E. A. .
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2015, 42 (03) :88-92
[49]   Frequency Stabilization of Laser Diodes in an Aggressive Thermal Environment [J].
Minch, J. R. ;
Walther, F. G. ;
Savage, S. ;
Plante, A. ;
Scalesse, V. .
FREE-SPACE LASER COMMUNICATION AND ATMOSPHERIC PROPAGATION XXVII, 2015, 9354
[50]   Transient Thermal Measurement and Behavior of Integrated Circuits [J].
Kendig, Dustin ;
Kazawa, Kazuaki ;
Shakouri, Ali .
2013 TWENTY NINTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM (SEMI-THERM), 2013, :206-210