Adjusting the Energy-Storage Characteristics of 0.95NaNbO3-0.05Bi(Mg0.5Sn0.5)O3 Ceramics by Doping Linear Perovskite Materials

Passive electronic components are an indispensable part of integrated circuits, which are key to the miniaturization and integration of electronic components. As an important branch of passive devices, the relatively low energy-storage capacity of ceramic capacitors limits their miniaturization. To solve this problem, this study adopts the strategy of doping linear materials, specifically CT, into 0.95NaNbO(3)-0.05Bi(Mg0.5Sn0.5)O-3 (0.95NN-0.05BMS) ceramics to increase the disorder of the system through the nonequivalent substitution of A and B sites to achieve the sintering temperature and the residual polarization. Meanwhile, the breakdown electric field strength (E-b) is improved by adjusting the activation energy of the material and the relative density of the sample. Thus, an ultrahigh W-rec of 6.35 J/cm(3) and a eta of 80% are obtained at an E-b of 646 kV/cm. Additionally, through the analysis of the dielectric temperature spectrum, it is found that the 0.88(0.95NN-0.05BMS)-0.12CT sample can satisfy the technical standards of general ceramic Z5U and patch ceramic X6R. The performance of the ceramics also remains stable within a temperature range of 20-200 degrees C, a frequency range of 1-100 Hz, and 10(4) cycles. The charge and discharge tests of the ceramics show that the t(0.9) of the sample floats between 1.02 and 1.04 mu s, which illustrates its potential application in the field of pulsed power components.