Yellow luminescence in ZnO layers grown on sapphire

被引：62

作者：

Reshchikov, M. A. ^{[1
]}

Xie, J. Q. ^{[2
]}

Hertog, B. ^{[2
]}

Osinsky, A. ^{[2
]}

机构：

[1] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

[2] SVT Associates Inc, Eden Prairie, MN 55344 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2924437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We conducted a detailed study of the yellow luminescence (YL) band that has a maximum of 2.19 eV at 10 K in undoped and N-doped ZnO layers grown on sapphire substrates. Important characteristics of this band and the related defect are established. The YL band is attributed to a transition between a shallow donor and an acceptor with an energy level similar to 0.4 eV above the valence band. Quenching of the YL intensity with activation energies of 85 meV and 0.4 eV is observed at temperatures above 100 and 320 K, respectively. The YL band is possibly due to a defect complex that may include a Zn vacancy. (C) 2008 American Institute of Physics.

引用

页数：8

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