A Linear HBT Power Amplifier with an IMD3 reduction method for LTE-A small-cell base-station applications

被引：0

作者：

Lee, Hui Dong ^{[1
]}

Jang, Seunghyun ^{[1
]}

Park, Bonghyuk ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Mobile RF Res Team, 218 Gajeong Ro, Daejeon 34129, South Korea

来源：

2016 URSI ASIA-PACIFIC RADIO SCIENCE CONFERENCE (URSI AP-RASC) | 2016年

关键词：

intermodulation distortion; linearity; power amplifier; transconductance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly linear HBT power amplifier (PA) for LTE-A small-cell base-stations is presented. By separating a bias point of the PA sub-cells and combining these outputs with out-of phasing, the third-order intermodulation distortion (IMD) can be reduced. By the simulation results, the third-order IMDs are approximately-50 dBc and -43 dBc with and without the separate biasing at an output power of 29 dBm, respectively. The designed HBT PA has a gain of 31 dB, a P1dB of 35 dBm, and a PAE of 38.1% under 5 V supply voltage.

引用

页码：1901 / 1902

页数：2

共 13 条

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