Blue shift in the optical band gap of amorphous Hf-In-Zn-O thin films deposited by RF sputtering

被引：13

作者：

Thakur, Anup ^{[1
,2
]}

Kang, Se-Jun ^{[3
]}

Baik, Jae Yoon ^{[1
]}

Yoo, Hanbyeol ^{[3
]}

Lee, Ik-Jae ^{[1
]}

Lee, Han-Koo ^{[1
]}

Jung, Seonghoon ^{[1
]}

Park, Jaehun ^{[1
]}

Shin, Hyun-Joon ^{[1
,3
]}

机构：

[1] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea

[2] Punjabi Univ, UCoE, Patiala 147002, Punjab, India

[3] POSTECH, Dept Phys, Pohang 790784, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 525卷

基金：

新加坡国家研究基金会;

关键词：

Amorphous Hf-In-Zn-O; Blue shift; Optical band gap; Optical properties; ELECTRONIC-STRUCTURE; TRANSPARENT; TRANSISTOR; PERFORMANCE;

D O I：

10.1016/j.jallcom.2012.02.091

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous Hf-In-Zn-O (a-HIZO) thin films were grown by radio frequency (RF) magnetron sputtering in a mixed atmosphere of Ar and O-2 at fixed 5 mTorr working pressure. A 13% enhancement (blue shift) in band gap from 3.59 eV to 4.06 eV was obtained as O-2/Ar flow ratio increased from 5% to 50%. a-HIZO films deposited at higher O-2/Ar gas flow ratio were more resistive. Oxygen-incorporation-induced reduction of oxygen vacancies is suggested to explain the band gap and resistivity increase. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：172 / 174

页数：3

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