The integrated fast short-circuit protection technique with soft turn-off for SiC MOSFET

被引：0

作者：

Cao, Jianwen ^{[1
]}

Zhou, Zekun ^{[1
]}

Shi, Yue ^{[2
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Sichuan, Peoples R China

[2] Chengdu Univ Informat Technol, Coll Commun Engn, Chengdu 610225, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2022年 / 139卷

基金：

美国国家科学基金会;

关键词：

EMI noises; FOF; HSF; Short-circuit protection; Soft turn-off; DV/DT IMMUNITY; GATE DRIVER; DESIGN;

D O I：

10.1016/j.microrel.2022.114806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the integrated fast short-circuit protection technique with soft turn-off is proposed for SiC (silicon carbide) MOSFET. Two short-circuit faults, HSF (hard switching fault) and FOF (flashover fault), can be judged by detecting EMI (electromagnetic interference) noises of SiC MOSFET. When there are short-circuit faults for SiC MOSFET, the soft turn-off is initiated to reduce EMI noises and protect SiC MOSFET. The proposed fast short-circuit protection technique is realized on the chip and is verified in a 0.18 mu m BCD (Bipolar-CMOS-DMOS) process. Simulation results show that the proposed short-circuit protection has a fast response speed and then SiC MOSFET is turned off slowly when there are HSF and FOF. Therefore, the proposed fast short-circuit protection technique can be well applied for SiC MOSFETs, making SiC MOSFETs safely used in HV (high-voltage) and high current applications.

引用

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