Oxygen incorporated solution-processed high-κ La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

被引:8
作者
Yan, Longsen [1 ,2 ]
He, Waner [1 ,2 ]
Liang, Xiaoci [3 ]
Liu, Chuan [3 ]
Lu, Xihong [4 ]
Luo, Chunlai [1 ,2 ]
Zhang, Aihua [1 ,2 ]
Tao, Ruiqiang [1 ,2 ]
Fan, Zhen [1 ,2 ]
Zeng, Min [1 ,2 ]
Ning, Honglong [5 ]
Zhou, Guofu [6 ,7 ]
Lu, Xubing [1 ,2 ]
Liu, Junming [1 ,2 ,8 ]
机构
[1] South China Normal Univ, South China Acad Adv Optoelect, Inst Adv Mat, Guangzhou 510006, Peoples R China
[2] South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China
[3] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510274, Peoples R China
[4] Sun Yat Sen Univ, Key Lab Low Carbon Chem & Energy Conservat Guangd, KLGHEI Environm & Energy Chem, Sch Chem,MOE Key Lab Bioinorgan & Synthet Chem, Guangzhou 510275, Peoples R China
[5] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China
[6] South China Normal Univ, South China Acad Adv Optoelect, Inst Elect Paper Displays, Guangzhou 510006, Peoples R China
[7] South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China
[8] Nanjing Univ, Ctr Adv Microstruct, Lab Solid State Microstruct & Innovat, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
HIGH-K; HIGH-PERFORMANCE; SOL-GEL; GATE DIELECTRICS; LOW-TEMPERATURE; TRANSISTORS; STATE;
D O I
10.1039/c9tc06210f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-power, form-free electronics require low-temperature and solution-processed high-kappa dielectric materials with extremely low leakage current and good flexibility, which is still very challenging. For example, the large band-gap material La2O3 has been hampered from low-power electronics applications due to the poor stability and inability to be solution-processed. Here, we develop oxygen-incorporated solution-deposition to obtain a high-kappa La2O3 dielectric film at a low temperature (120 degrees C). The thin film exhibits a uniform large area, a high-kappa value (>12), a large band gap (>6.3 eV), a high breakdown electric field (>7 MV cm(-1)), and a very low leakage current (10(-8) A cm(-2) at 1 MV cm(-1)) with excellent and stable insulating characteristics comparable with ALD deposited films. This method efficiently improves the chemical reaction and wettability of the precursor solution for densification and is also applicable for other high-kappa dielectric materials like HfO2 and ZrO2. The film endures compressive strain at the limit of the PET substrate (similar to 2.5%) and enables flexible CMOS circuits with stable organic thin-film transistors (OTFTs) that exhibit a high gain (>90), a low operation voltage (2 V), and a low static power consumption (similar to 0.5 nW). The excellent characteristics enable the presented film and method to generally advance low-power and high-performance electronics with printable and flexible properties.
引用
收藏
页码:5163 / 5173
页数:11
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