IDeF-X HDBD: Low-Noise ASIC for Imaging Spectroscopy With Semiconductor Detectors in Space Science Applications

被引:9
作者
Baudin, D. [1 ]
Limousin, O. [2 ]
Gevin, O. [1 ]
Meuris, A. [2 ]
Altenmueller, K. [3 ,4 ,5 ]
Bausson, P. [1 ]
Ceraudo, F. [2 ]
Coppolani, X. [1 ]
Maier, D. [2 ]
Passeron, C. [2 ]
Schneider, B. [2 ]
Delagnes, E. [1 ]
机构
[1] Univ Paris Saclay, IRFU, DEDIP, CEA, F-91191 Gif Sur Yvette, France
[2] Univ Paris Saclay, Univ Paris Diderot, Sorbonne Paris Cite, CNRS,AIM,CEA, F-91191 Gif Sur Yvette, France
[3] Tech Univ Munich, Phys Dept, D-85748 Garching, Germany
[4] Univ Paris Saclay, CEA, IRFU, DPHP, F-91191 Gif Sur Yvette, France
[5] Univ Zaragoza, E-50009 Zaragoza, Spain
关键词
Detectors; Transistors; Thermal noise; Silicon; X-ray imaging; Space vehicles; MOS devices; ASIC; bipolarity; CSA; ENC; imaging spectroscopy; low noise; silicon drift detector; space application; X-rays; READOUT;
D O I
10.1109/TNS.2022.3144464
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present the IDeF-X HDBD integrated circuit, our latest 32-channel application specified integrated circuit devoted to semiconductor photon counting X-ray detectors, designed to read charges ranging from -40 to 40 fC. The chip reaches an equivalent noise charge (ENC) floor of 17 electrons rms and is optimized for low input capacitance (< 10 pF). Each channel is based on an optimized charge sensitive amplifier (CSA) followed by a CR-RC2 filter and a peak detector with a power consumption of 850 mu W/channel. Gain and shaping times are tunable. This circuit has been designed with radiation mitigation techniques to meet space application requirements. This ASIC can read either cadmium telluride or silicon detectors for imaging-spectroscopy applications. An energy resolution of 230-eV FHWM at 6 keV and a low-level threshold of 1.2 keV were demonstrated with a single pixel silicon drift detector connected to one channel.
引用
收藏
页码:620 / 626
页数:7
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