Direct Pulse Position Modulation of a 410 nm Semipolar GaN Laser Diode for Space Optical Communications

被引：0

作者：

Fridlander, Joseph ^{[1
]}

Lee, Changmin ^{[2
]}

Speck, James S. ^{[2
]}

DenBaars, Steven P. ^{[1
,2
]}

Klamkin, Jonathan ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semipolar GaN laser was characterized for space optical communications, achieving a peak power of 160 mW. Periodic and random M-ary pulse position modulation sequences with pulse widths of 5 ns and 10 ns were demonstrated.

引用

页数：2

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