Positive exchange bias in a Ni80Fe20/NixFe1-xO thin-film bilayer

被引：13

作者：

Lin, K. -W ^{[1
]}

Tzeng, Y. -M ^{[1
]}

Guo, Z. -Y. ^{[1
]}

Liu, C-Y. ^{[1
]}

van Lierop, J. ^{[2
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan

[2] Univ Manitoba, Dept Phys & Astron, Winnipeg, MB, Canada

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 304卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Exchange bias; Thin-film; Ion-beam sputter deposition;

D O I：

10.1016/j.jmmm.2006.02.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured positive exchange bias in a Ni80Fe20/NixFe1-xO thin-film nanocrystallite system. A series of solid solution NixFe1-xO 40 nm thick films capped with 25 nm thick Ni80Fe20 were deposited using a range of %O-2/Ar bombardment energies (i.e. End-Hall voltages). Proper tuning of the deposition conditions results in a Ni80Fe20/NixFe1-xO (30% O-2/Ar) based bilayer that exhibits a positive exchange bias loop shift of H-ex similar to 60 Oe at 150 K. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：E124 / E127

页数：4

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