The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs

被引：1

作者：

Mamatrishat, M. ^{[1
]}

Kouda, M. ^{[1
]}

Kawanago, T. ^{[1
]}

Kakushima, K. ^{[2
]}

Ahmet, P. ^{[1
]}

Tsutsui, K. ^{[2
]}

Kataoka, Y. ^{[2
]}

Nishiyama, A. ^{[2
]}

Sugii, N. ^{[2
]}

Natori, K. ^{[1
]}

Hattori, T. ^{[1
]}

Iwai, H. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 04期

关键词：

INVERSION-LAYER MOBILITY; FIELD-EFFECT-TRANSISTORS; LIMITED MOBILITY; INTERFACE; INSULATOR; SIO2;

D O I：

10.1088/0268-1242/27/4/045014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of remote Coulomb scattering on electron mobility in W/La2O3/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La2O3 interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.

引用

页数：5

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