The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs

被引：1

作者：

Mamatrishat, M. ^{[1
]}

Kouda, M. ^{[1
]}

Kawanago, T. ^{[1
]}

Kakushima, K. ^{[2
]}

Ahmet, P. ^{[1
]}

Tsutsui, K. ^{[2
]}

Kataoka, Y. ^{[2
]}

Nishiyama, A. ^{[2
]}

Sugii, N. ^{[2
]}

Natori, K. ^{[1
]}

Hattori, T. ^{[1
]}

Iwai, H. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 04期

关键词：

INVERSION-LAYER MOBILITY; FIELD-EFFECT-TRANSISTORS; LIMITED MOBILITY; INTERFACE; INSULATOR; SIO2;

D O I：

10.1088/0268-1242/27/4/045014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of remote Coulomb scattering on electron mobility in W/La2O3/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La2O3 interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.

引用

页数：5

共 50 条

[1] Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks
Mamatrishat, M.
Kouda, M.
Kakushima, K.
Ahmet, P.
Tsutsui, K.
Sugii, N.
Natori, K.
Hattori, T.
Iwai, H.
ULSI PROCESS INTEGRATION 6, 2009, 25 (07): : 253 - 257
[2] Fully silicided NiSi gate on La2O3 MOSFETs
Lin, CY
Ma, MW
Chin, A
Yeo, YC
Zhu, CX
Li, MF
Kwong, DL
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) : 348 - 350
[3] Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs
Esseni, D
Abramo, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) : 1665 - 1674
[4] Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack
Ahmet, Parhat
Nakagawa, Kentaro
Kakushima, Kuniyuki
Nohira, Hiroshi
Tsutsui, Kazuo
Sugii, Nobuyuki
Hattori, Takeo
Iwai, Hiroshi
MICROELECTRONICS RELIABILITY, 2008, 48 (11-12) : 1769 - 1771
[5] On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric
Feng, Xuan
Wong, H.
Yang, B. L.
Dong, Shurong
Iwai, H.
Kakushima, K.
MICROELECTRONICS RELIABILITY, 2014, 54 (6-7) : 1133 - 1136
[6] Current conduction and stability of CeO2/La2O3 stacked gate dielectric
Wong, Hei
Yang, B. L.
Dong, Shurong
Iwai, H.
Kakushima, K.
Ahmet, P.
APPLIED PHYSICS LETTERS, 2012, 101 (23)
[7] Ge p-channel MOSFETS with La2O3 and Al2O3 Gate Dielectrics
Rossel, C.
Dimoulas, A.
Tapponnier, A.
Caimi, D.
Webb, D. J.
Andersson, C.
Sousa, M.
Marchiori, C.
Siegwart, H.
Fompeyrine, J.
Germann, R.
ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, : 79 - +
[8] Nanostructural and Electrical Properties of Al/Sn/La2O3 Nanocomposite as a Gate Dielectric of MOSFETs
Masoud Ebrahimzadeh
Mehrnoush Nakhaei
Mansoure Padam
Ali Bahari
Proceedings of the National Academy of Sciences, India Section A: Physical Sciences, 2020, 90 : 637 - 646
[9] Nanostructural and Electrical Properties of Al/Sn/La2O3 Nanocomposite as a Gate Dielectric of MOSFETs
Ebrahimzadeh, Masoud
Nakhaei, Mehrnoush
Padam, Mansoure
Bahari, Ali
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES INDIA SECTION A-PHYSICAL SCIENCES, 2020, 90 (04) : 637 - 646
[10] Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics
Chang, C. -Y.
Endo, K.
Kato, K.
Takenaka, M.
Takagi, S.
AIP ADVANCES, 2017, 7 (09)

← 1 2 3 4 5 →