Dangling-bond logic gates on a Si(100)-(2 x 1)-H surface

被引:37
作者
Kawai, Hiroyo [1 ]
Ample, Francisco [1 ]
Wang, Qing [2 ]
Yeo, Yong Kiat [1 ,2 ]
Saeys, Mark [1 ,2 ]
Joachim, Christian [1 ,3 ,4 ]
机构
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 117576, Singapore
[3] CEMES CNRS, Nanosci Grp, F-31055 Toulouse, France
[4] CEMES CNRS, MANA Satellite, F-31055 Toulouse, France
关键词
SCANNING TUNNELING MICROSCOPE; QUANTIZED CONDUCTANCE; SINGLE-MOLECULE; ATOMIC SWITCH; WIRES; ELECTRONICS; SI; HYDROCARBONS; SPECTROSCOPY; TEMPERATURE;
D O I
10.1088/0953-8984/24/9/095011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Atomic-scale Boolean logic gates (LGs) with two inputs and one output (i.e. OR, NOR, AND, NAND) were designed on a Si(100)-(2 x 1)-H surface and connected to the macroscopic scale by metallic nano-pads physisorbed on the Si(100)-(2 x 1)-H surface. The logic inputs are provided by saturating and unsaturating two surface Si dangling bonds, which can, for example, be achieved by adding and extracting two hydrogen atoms per input. Quantum circuit design rules together with semi-empirical elastic-scattering quantum chemistry transport calculations were used to determine the output current intensity of the proposed switches and LGs when they are interconnected to the metallic nano-pads by surface atomic-scale wires. Our calculations demonstrate that the proposed devices can reach ON/OFF ratios of up to 2000 for a running current in the 10 mu A range.
引用
收藏
页数:13
相关论文
共 55 条
[1]   Intramolecular circuits connected to N electrodes using a scattering matrix approach -: art. no. 155419 [J].
Ami, S ;
Joachim, C .
PHYSICAL REVIEW B, 2002, 65 (15) :1-14
[2]   Molecular 'OR' and 'AND' logic gates integrated in a single molecule [J].
Ami, S ;
Hliwa, M ;
Joachim, C .
CHEMICAL PHYSICS LETTERS, 2003, 367 (5-6) :662-668
[3]   Logic gates and memory cells based on single C60 electromechanical transistors [J].
Ami, S ;
Joachim, C .
NANOTECHNOLOGY, 2001, 12 (01) :44-52
[4]   The chemisorption of polyaromatic hydrocarbons on Si(100)H dangling bonds [J].
Ample, F. ;
Joachim, C. .
SURFACE SCIENCE, 2008, 602 (08) :1563-1571
[5]   Single OR molecule and OR atomic circuit logic gates interconnected on a Si(100)H surface [J].
Ample, F. ;
Duchemin, I. ;
Hliwa, M. ;
Joachim, C. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (12)
[6]  
[Anonymous], INT TECHNOLOGY ROADM
[7]   MOLECULAR RECTIFIERS [J].
AVIRAM, A ;
RATNER, MA .
CHEMICAL PHYSICS LETTERS, 1974, 29 (02) :277-283
[8]   Electronic properties of the n-doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K [J].
Bellec, Amandine ;
Riedel, Damien ;
Dujardin, Gerald ;
Boudrioua, Ouarda ;
Chaput, Laurent ;
Stauffer, Louise ;
Sonnet, Philippe .
PHYSICAL REVIEW B, 2009, 80 (24)
[9]   ROLE OF QUANTUM COHERENCE IN SERIES RESISTORS [J].
BUTTIKER, M .
PHYSICAL REVIEW B, 1986, 33 (05) :3020-3026
[10]   Theoretical study of dangling-bond wires on the H-terminated Si surface [J].
Çakmak, M ;
Srivastava, GP .
SURFACE SCIENCE, 2003, 532 :556-559