Novel symmetric high Q inductors fabricated using wafer-level CSP technology

被引:0
|
作者
Aoki, Yutaka [1 ]
Shimizu, Shoichi [2 ]
Honjo, Kazuhiko [2 ]
机构
[1] CASIO Comp Co Ltd, R&D Div, 3-2,Fujihashi 3 Chome Ome Shi, Tokyo, Japan
[2] Univ Electrocommun, Dept Informat & Commun Engn, Chofu, Tokyo, Japan
来源
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Wafer level chip-size package (WLP) technology enables fabrications of low-loss high-Q inductors, which suffer from unfavorable two-port asymmetric characteristics. To overcome this problem, a novel clip-type inductor has been proposed, where the electrode crossover points in multi-turn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. The novel clip inductors were designed and fabricated using WPL technology. By means of a developed 4-nH novel clip inductor, the Q-factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. Q-factors of developed inductors have also been evaluated under both a conventional short-circuited load condition and an impedance matched condition.
引用
收藏
页码:504 / +
页数:2
相关论文
共 50 条
  • [1] Novel symmetric high Q inductors fabricated using wafer-level CSP technology
    Aoki, Yutaka
    Shimizu, Shoichi
    Honjo, Kazuhiko
    2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2007, : 1137 - +
  • [2] Novel Design Method for Electrically Symmetric High-Q Inductor Fabricated Using Wafer-Level CSP Technology
    Aoki, Yutaka
    Shimizu, Shoichi
    Honjo, Kazuhiko
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2013, 3 (01): : 31 - 39
  • [3] Q-factor definition and evaluation for spiral inductors fabricated using wafer-level CSP technology
    Aoki, Y
    Honjo, K
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (10) : 3178 - 3184
  • [4] High-Q inductors and transmission lines on 20 Ω.cm Si using wafer-level packaging technology
    Carchon, G
    Sun, X
    De Raedt, W
    2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, : 111 - 114
  • [5] Wafer-level packaging technology for high-Q on-chip inductors and transmission lines
    Carchon, GJ
    De Raedt, W
    Beyne, E
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (04) : 1244 - 1251
  • [6] High-Q RF inductors on standard silicon realized using wafer-level packaging techniques
    Carchon, G
    Jenei, S
    Carbonell, L
    Van Hove, M
    Decoutere, S
    De Raedt, W
    Maex, K
    Beyne, E
    2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 1287 - 1290
  • [7] Wafer-level packaging technology for extended global wiring and inductors
    Carchon, G
    Carbonell, L
    Jenei, S
    Van Hove, M
    Decoutere, S
    ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 103 - 106
  • [8] Improvements of solder ball shear strength of a wafer-level CSP using a novel Cu stud technology
    Chang, KC
    Chiang, KN
    IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2004, 27 (02): : 373 - 382
  • [9] Wafer-level CSP, wafer-level assembly/test: Integrating backend processes
    Novitsky, J
    Miller, C
    SOLID STATE TECHNOLOGY, 2001, 44 (02) : 78 - +
  • [10] Low cost wafer-level CSP: A novel redistribution methodology
    Rinne, GA
    Walling, JD
    Mis, JD
    50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, 2000, : 93 - 96