Characteristic-impedance measurement error on lossy substrates

被引：41
作者：
Williams, DF
Arz, U
Grabinski, H
机构：
[1] Natl Inst Stand & Technol, Boulder, CO 80303 USA
[2] Leibniz Univ Hannover, D-30167 Hannover, Germany
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2001年 / 11卷 / 07期
关键词：
characteristic impedance; measurement; silicon;
D O I：
10.1109/7260.933777
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper examines error caused by parasitic inductance in the characteristic impedance measured by the calibration comparison method on lossy silicon substrates.
引用
收藏
页码：299 / 301
页数：3
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