Arsenic selenide thin film degradation and its mitigation

被引：11

作者：

Frantz, Jesse A. ^{[1
]}

Myers, Jason D. ^{[1
]}

Bekele, Robel Y. ^{[2
]}

Spillmann, Christopher M. ^{[1
]}

Kolacz, Jakub ^{[1
]}

Gotjen, Henry ^{[1
]}

Nguyen, Vinh Q. ^{[1
]}

McClain, Collin C. ^{[2
]}

Sanghera, Jasbinder S. ^{[1
]}

机构：

[1] Naval Res Lab, 4555 Overlook Ave SW, Washington, DC 20375 USA

[2] Univ Res Fdn, Greenbelt, MD 20770 USA

来源：

OPTICAL MATERIALS EXPRESS | 2018年 / 8卷 / 12期

关键词：

UV-RADIATION; WAVE-GUIDES; AS2SE3; GENERATION;

D O I：

10.1364/OME.8.003659

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of arsenic triselenide (As2Se3) glass degrade significantly under ambient conditions in the presence of light. We investigate the mechanism of this degradation by maintaining thin film As2Se3 samples in a variety of environmental conditions for approximately one year and show that exposure to below-band gap light in the presence of oxygen and moisture lead to the formation of crystallites of arsenic oxide and selenium. Spectroscopic measurements, X-ray diffraction (XRD), and microscopy reveal that deposition of a thin (similar to 10 nm) passivation layer together with preventing exposure to below-band gap light inhibits degradation. These results indicate that As2Se3 is a practical material for use in applications such as integrated optic waveguides or dielectric metasurfaces operating in wavelengths from the short-wave infrared through the long-wave infrared. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：3659 / 3665

页数：7

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