Ultrasensitive Far-Infrared Phototransistors Fabricated in Superlattice Structures

被引：0

作者：

Ueda, Takeji ^{[1
,2
]}

Nagai, Naomi ^{[3
]}

Komiyama, Susumu ^{[1
]}

机构：

[1] Univ Tokyo, Dept Basic Sci, Meguro Ku, Tokyo 1538902, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

SINGLE-PHOTON DETECTOR; RANGE;

D O I：

10.1143/JJAP.51.050206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge sensitive infrared phototransistors (CSIPs), ultrasensitive detectors in the wavelength range of 10-50 mu m, are fabricated in GaAs/AlGaAs superlattice structures. The superlattice structures consist of alternately grown 2-nm-thick Al0.3Ga0.7As tunnel barriers and thickness-modulated GaAs layers from 2 to 10 nm. The tilted miniband formed in a superlattice structure serves as a potential slope similar to formally used compositionally graded barriers. The utilization of the superlattice in a CSIP is expected to give advantages of easier design, less impurities, and better repeatability in crystal growth, and therefore provides more reliable device performance. The novel structure paves the way for the future mass production of CSIPs. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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