The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

被引：9
|
作者：
Nikiforov, AI
Markov, VA
Cherepanov, VA
Pchelyakov, OP
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
THIN SOLID FILMS | 1998年 / 336卷 / 1-2期
基金：
俄罗斯基础研究基金会;
关键词：
MBE; RHEED; growth; Si; Ge; oscillations;
D O I：
10.1016/S0040-6090(98)01235-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thickness of a film growing during one oscillation period at MBE of silicon and germanium on a slightly misoriented Si(111) surface was measured as a function of temperature. The temperature elevation was found to result in either an increase or decrease in the oscillation period. That was accounted for by the occurrence of various barriers for incorporation of adatoms at the upper terrace into differently directed steps. The activation energies of nucleation of two-dimensional islands were determined. In the case of a decrease in the oscillation period the activation energy was 1.45 +/- 0.1 eV and 1.1 +/- 0.1 eV for epitaxy of silicon and germanium, respectively. In the case of a increase in the oscillation period the activation energy was 0.91 +/- 0.1 eV and 0.49 +/- 0.1 eV for epitaxy of silicon and germanium, respectively. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：183 / 187
页数：5
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