Correlation between Microstructure of Copper Oxide Thin Films and Its Gas Sensing Performance at Room Temperature

被引：4

作者：

Nayan, Nafarizal ^{[1
,2
]}

Sandan, Mohd Zainizan ^{[1
,2
]}

Wei, Low Jia ^{[1
,2
]}

Ahmad, Mohd Khairul ^{[1
,2
]}

Lias, Jais ^{[1
,2
]}

Fhong, Soon Chin ^{[1
,2
]}

Shakaff, Ali Yeon Md ^{[3
]}

Zakaria, Ammar ^{[3
]}

Zain, Ahmad Faizal Mohd ^{[4
]}

机构：

[1] Univ Tun Hussein Onn Malaysia, Microelect & Nanotechnol Shamsuddin Res Ctr MiNTS, Batu Pahat 86400, Johor, Malaysia

[2] Univ Tun Hussein Onn Malaysia, Fac Elect & Elect Engn, Batu Pahat 86400, Johor, Malaysia

[3] Univ Malaysia Perlis, Ctr Excellence Adv Sensor Technol, Arau Perlis 02600, Malaysia

[4] Univ Sains Islam Malaysia, Fac Sci & Technol, Nilai 71800, Negeri Sembilan, Malaysia

来源：

11TH ASIAN CONFERENCE ON CHEMICAL SENSORS | 2016年 / 20卷

关键词：

Magnetron sputtering plasma; Thin film; Copper oxide; Gas sensor; DEPOSITION;

D O I：

10.1016/j.proche.2016.07.007

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Radio-frequency magnetron sputtering using a Cu target was used to deposit cuprous oxide and cupric oxide thin films on silicon wafer. The substrate bias voltage and the O-2 flow ratio were varied during the deposition. The deposited thin films were characterized using scanning electron microscope. We found that the spherical and pyramid shapes structure of copper oxide thin films were deposited at critical O-2 flow ratio between 7 and 14%. The influence of substrate bias voltage was small and negligible. The deposited thin films were used for sensing characterization using ethanol vapor. Experimental results reveal that the pyramid shape of copper oxide thin film contribute to high respond rate when exposed to ethanol vapor. The respond and recovery rates which were measured at room temperature were very fast. This work had successfully demonstrated the formation of optimized copper oxide thin films and their usage for gas sensing application. (C) 2016 The Authors. Published by Elsevier B.V.

引用

页码：45 / 51

页数：7

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