Hydrogenic impurity states in zinc-blende InGaN quantum dot

被引：29

作者：

Jiang, Fengchun ^{[2
]}

Xia, Congxin ^{[1
]}

Wei, Shuyi ^{[1
]}

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China

[2] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2008年 / 403卷 / 01期

基金：

中国国家自然科学基金;

关键词：

quantum dot; hydrogenic impurity; donor binding energy;

D O I：

10.1016/j.physb.2007.08.153

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Within the framework of effective-mass approximation, the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) InGaN/GaN cylindrical quantum dot (QD) is investigated using a variational procedure. Numerical results show that the donor binding energy is highly dependent on impurity position and QD size. The donor binding energy E-b is largest when the impurity is located at the center of the QD. The donor binding energy is. decreased when the dot height (radius) is increased. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：165 / 169

页数：5

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