CRYSTALLINE ANISOTROPIC DRY ETCHING FOR SINGLE CRYSTAL SILICON

被引：0

作者：

Mishima, T. ^{[1
]}

Terao, K. ^{[1
]}

Takao, H. ^{[1
]}

Shimokawa, F. ^{[1
]}

Oohira, F. ^{[1
]}

Suzuki, T. ^{[1
]}

机构：

[1] Kagawa Univ, Fac Engn, Takamatsu, Kagawa 760, Japan

来源：

2011 IEEE 24TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2011年

关键词：

PLASMA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the possibility of the crystalline anisotropic etching of single-crystal silicon using a fully dry etching process. Conventionally, the crystalline anisotropic etching of silicon has been achieved only using specific wet solutions. In the proposed method, the anisotropic etching is made dominant by controlling the etching energy under specific dry etching conditions. The maximum crystalline anisotropic degree is 68% at present. It is expected that complicated three-dimensional microscale silicon structures can be formed by the fully dry process proposed in this paper.

引用

页码：221 / 224

页数：4

共 19 条

[1]

ARNONE C, 1989, APPL PHYS LETT, V54, P16

[2]

BAILEY AD, 1995, JPN J APPL PHYS 1, V34, P2083

[3] Temperature influence on etching deep holes with SF6/O2 cryogenic plasma [J].