Conducting thin films of ruthenium oxide prepared by MOCVD

被引：1

作者：

Hones, P ^{[1
]}

Kohli, CH ^{[1
]}

Sanjinés, R ^{[1
]}

Lévy, F ^{[1
]}

Gerfin, T ^{[1
]}

Grätzel, M ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, EPFL, Inst Phys Appliquee, CH-1015 Lausanne, Switzerland

来源：

ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS | 1998年 / 514卷

关键词：

D O I：

10.1557/PROC-514-479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conducting thin films of RuO2 were grown at temperatures down to 623K on glass by metalorganic chemical vapor deposition (MOCVD). Tris-trifluoroacetylacetonate-ruthenium(III) (Ru(tfa)(3)) served as precursor. Smooth, specular and well adherent films were deposited, if the reaction gas contained water. The films were investigated by X-ray diffraction, SEM, and four-probe resistivity measurement. Growth kinetics were also studied by in situ ellipsometry. The results are compared with films prepared by d.c, reactive sputtering before and after annealing. The properties of the MOCVD films, in particular the resistivity (rho down to 72 mu Omega cm), are comparable to CVD films deposited at much higher temperatures and sputtered films after high temperature annealing.

引用

页码：479 / 484

页数：6