Ni-doped GST materials for high speed phase change memory applications

被引：53
作者：
Zhu, Yueqin [1 ,2 ]
Zhang, Zhonghua [1 ]
Song, Sannian [1 ]
Xie, Huaqing [2 ]
Song, Zhitang [1 ]
Li, Xiaoyun [1 ]
Shen, Lanlan [1 ]
Li, Le [1 ]
Wu, Liangcai [1 ]
Liu, Bo [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Beijing 100864, Peoples R China
[2] Shanghai Second Polytech Univ, Sch Urban Dev & Environm Engn, Shanghai 201209, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 2015年 / 64卷
基金：
中国国家自然科学基金;
关键词：
Amorphous materials; Sputtering; X-ray diffraction; Transmission electron microscopy (TEM); Electrical properties; GE2SB2TE5; STORAGE;
D O I：
10.1016/j.materresbull.2015.01.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, Ni-doped Ge2Sb2Te5 (GST) was investigated for high speed phase change memory applications. Compared with GST, Ni0.3Ge2.8Sb2.2Te4.2 film exhibits a higher crystallization temperature (similar to 217 degrees C) and a better data retention ability (similar to 135 degrees C for 10 years). A reversible switching between set and reset can be realized by an electric pulse as short as 6-ns for Ni0.3Ge2.8Sb2.2Te4.7 based phase change memory. Furthermore, Ni0.3Ge2.8Sb2.2Te4.7 based cell shows good endurance up to 1.5 x 10(4) SET RESET cycles during endurance test. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：333 / 336
页数：4
相关论文
共 18 条
  • [1] Nanoscale Phase Separation and Building Blocks of Ge2Sb2Te5N and Ge2Sb2Te5N2 Thin Films
    Borisenko, Konstantin B.
    Chen, Yixin
    Song, Se Ahn
    Cockayne, David J. H.
    [J]. CHEMISTRY OF MATERIALS, 2009, 21 (21) : 5244 - 5251
  • [2] Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5
    Cho, Eunae
    Han, Seungwu
    Kim, Dohyung
    Horii, Hideki
    Nam, Ho-Seok
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (04)
  • [3] Kim D.H., 2007, MATER CHARACT, V479, P484
  • [4] Prospects of doped Sb-Te phase-change materials for high-speed recording
    Lankhorst, MHR
    van Pieterson, L
    van Schijndel, M
    Jacobs, BAJ
    Rijpers, JCN
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2B): : 863 - 868
  • [5] Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material
    Liu, B
    Song, ZT
    Feng, SL
    Chen, BM
    [J]. MICROELECTRONIC ENGINEERING, 2005, 82 (02) : 168 - 174
  • [6] Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications
    Lu, Yegang
    Song, Sannian
    Song, Zhitang
    Rao, Feng
    Wu, Liangcai
    Zhu, Min
    Liu, Bo
    Yao, Dongning
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (19)
  • [7] Muller G., 2004, IEEE INT EL DEV M, V567, P570
  • [8] Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application
    Peng, Cheng
    Wu, Liangcai
    Rao, Feng
    Song, Zhitang
    Zhou, Xilin
    Zhu, Min
    Liu, Bo
    Yao, Dongning
    Feng, Songlin
    Yang, Pingxiong
    Chu, Junhao
    [J]. SCRIPTA MATERIALIA, 2011, 65 (04) : 327 - 330
  • [9] Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory
    Ryu, Seung Wook
    Oh, Jin Ho
    Lee, Jong Ho
    Choi, Byung Joon
    Kim, Won
    Hong, Suk Kyoung
    Hwang, Cheol Seong
    Kim, Hyeong Joon
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (14)
  • [10] Disorder-induced localization in crystalline phase-change materials
    Siegrist, T.
    Jost, P.
    Volker, H.
    Woda, M.
    Merkelbach, P.
    Schlockermann, C.
    Wuttig, M.
    [J]. NATURE MATERIALS, 2011, 10 (03) : 202 - 208
12