Ni-doped GST materials for high speed phase change memory applications

被引：54

作者：

Zhu, Yueqin ^{[1
,2
]}

Zhang, Zhonghua ^{[1
]}

Song, Sannian ^{[1
]}

Xie, Huaqing ^{[2
]}

Song, Zhitang ^{[1
]}

Li, Xiaoyun ^{[1
]}

Shen, Lanlan ^{[1
]}

Li, Le ^{[1
]}

Wu, Liangcai ^{[1
]}

Liu, Bo ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Beijing 100864, Peoples R China

[2] Shanghai Second Polytech Univ, Sch Urban Dev & Environm Engn, Shanghai 201209, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2015年 / 64卷

基金：

中国国家自然科学基金;

关键词：

Amorphous materials; Sputtering; X-ray diffraction; Transmission electron microscopy (TEM); Electrical properties; GE2SB2TE5; STORAGE;

D O I：

10.1016/j.materresbull.2015.01.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, Ni-doped Ge2Sb2Te5 (GST) was investigated for high speed phase change memory applications. Compared with GST, Ni0.3Ge2.8Sb2.2Te4.2 film exhibits a higher crystallization temperature (similar to 217 degrees C) and a better data retention ability (similar to 135 degrees C for 10 years). A reversible switching between set and reset can be realized by an electric pulse as short as 6-ns for Ni0.3Ge2.8Sb2.2Te4.7 based phase change memory. Furthermore, Ni0.3Ge2.8Sb2.2Te4.7 based cell shows good endurance up to 1.5 x 10(4) SET RESET cycles during endurance test. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：333 / 336

页数：4

共 18 条

[1] Nanoscale Phase Separation and Building Blocks of Ge2Sb2Te5N and Ge2Sb2Te5N2 Thin Films [J].