Photoreflectance study of electric fields in ZnSe from ZnSe/GaAs/GaAs heterostructures.

被引：0

作者：

Constantino, ME ^{[1
]}

Salazar-Hernández, B ^{[1
]}

机构：

[1] Univ Autonoma estado Morelos, Ctr Invest Ingn & Ciencias Aplicadas, Cuernavaca 62210, Morelos, Mexico

来源：

APPLICATIONS OF PHOTONIC TECHNOLOGY 4: CLOSING THE GAP BETWEEN THEORY, DEVELOPMENT, AND APPLICATION | 2000年 / 4087卷

关键词：

ZnSe/GaAs/GaAs; heterostructures; photoreflectance; electric field; franz-keldysh;

D O I：

10.1117/12.406450

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

ZnSe/GaAs/GaAs heterostructures grown by Molecular Beam Epitaxy have been studied by Photoreflectance. From Franz-Keldysh oscillations we found the electric fields at ZnSe. It was observed that the electric field value decreases with the temperature. The calculated values (< 58 kV/cm) are in agreement with the typical values in semiconductors and are higher than those at the interfacial GaAs. The electric field strength is correlated with the presence of superficial states due to defects such as dislocations.

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页码：541 / 546

页数：6

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