X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

被引：13

作者：

Sarazin, N. ^{[1
]}

Jardel, O. ^{[1
]}

Morvan, E. ^{[1
]}

Aubry, R. ^{[1
]}

Laurent, M. ^{[1
]}

Magis, M. ^{[1
]}

Tordjman, M. ^{[1
]}

Alloui, M. ^{[1
]}

Drisse, O. ^{[1
]}

Di Persio, J. ^{[1
]}

Poisson, M. A. di Forte ^{[1
]}

Delage, S. L. ^{[1
]}

Vellas, N. ^{[2
]}

Gaquiere, C. ^{[3
]}

Theron, D. ^{[3
]}

机构：

[1] Alcatel Thales III V Lab, Route Nozay, F-91460 Marcoussis, France

[2] MC2 IEMN, F-59652 Villeneuve Dascq, France

[3] IEMN, F-59652 Villeneuve Dascq, France

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 23期

关键词：

D O I：

10.1049/el:20072598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 mu m. A good extrinsic transconductance value of 400 mS/mm was also measured on these transistors. The results are believed to be the best power results published about AlInN/GaN HEMTs.

引用

页码：1317 / 1318

页数：2

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