Preparation of InP-SiO2 3D photonic crystals

被引：3
作者：
Tan, CH [1 ]
Fan, GH [1 ]
Zhou, TM [1 ]
Li, ST [1 ]
Sun, HQ [1 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2005年 / 363卷 / 1-4期
关键词：
artificial opals; photonic band gap; photonic crystal; metal-organic chemical-vapor deposition; scanning electron microscopy; spectacular reflectivity;
D O I：
10.1016/j.physb.2005.01.399
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Fabricated artificial opal templates and low pressure metal-organic chemical-vapor deposition have been used to infill the voids within opals and optimized the growth parameters. Scanning electron microscopy images, X-ray diffraction and reflection spectra results show that the InP is homogeneously distributed inside the opals, with high crystalline quality. The filling ratios of InP in the voids is about 12.8% and the photonic band gap is shifted to higher wavelength as a result of the high contrast of dielectric constants when InP is introduced which are in agreement with theoretical calculations. (c) 2005 Elsevier B.V. All rights reserved.
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页码：1 / 6
页数：6
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