Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor

被引:239
作者
Nikitskiy, Ivan [1 ]
Goossens, Stijn [1 ]
Kufer, Dominik [1 ]
Lasanta, Tania [1 ]
Navickaite, Gabriele [1 ]
Koppens, Frank H. L. [1 ,2 ]
Konstantatos, Gerasimos [1 ,2 ]
机构
[1] Barcelona Inst Sci & Technol, ICFO Inst Ciencies Foton, Ave Carl Friedrich Gauss 3, Barcelona 08860, Spain
[2] ICREA, Lluis Co 23, Barcelona 08010, Spain
基金
欧洲研究理事会;
关键词
INFRARED PHOTODETECTORS; PERFORMANCE; CMOS;
D O I
10.1038/ncomms11954
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 105 and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics.
引用
收藏
页数:8
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