A 0.15μm Gate InAlN/GaN HEMT with thin Barrier layer

被引：0

作者：

Zhou, Jianjun ^{[1
]}

Dong, Xun ^{[1
]}

Lu, Haiyn ^{[1
]}

Kong, Ceng ^{[1
]}

Kong, Yuechan ^{[1
]}

Chen, Tangsheng ^{[1
]}

Chen, Chen ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing, Jiangsu, Peoples R China

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年

关键词：

InAlN/GaN HEMT; thin barrier; millimeter-wave;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality thin barrier layer In0.18Al0.82N/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). A 0.15 mu m gate InAlN/GaN HEMT was fabricated with 1A/mm drain current at zero gate bias. The device show good pinch-off performance. A high transconductance of 482 mS/mm and current gain cutoff frequency of 80GHz were measured without de-embedding.

引用

页数：2

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