Research on Multi-morphology Evolution of MoS2 in Chemical Vapor Deposition

被引：9

作者：

Zang, Lingyu ^{[1
]}

Chen, Long ^{[1
]}

Tan, Dongchen ^{[1
]}

Cao, Xuguang ^{[1
]}

Sun, Nan ^{[1
]}

Jiang, Chengming ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Mech Engn, Dalian 116024, Peoples R China

来源：

CHEMISTRYSELECT | 2021年 / 6卷 / 31期

基金：

中国国家自然科学基金;

关键词：

Chemical Vapor Deposition; Crystal growth; MoS2; Multi-morphology; M-CV model; MONOLAYER MOS2; GROWTH; MODEL; CVD;

D O I：

10.1002/slct.202101843

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Due to the special structure and excellent performance, the two-dimensional mono-layer MoS2 has received extensive attention in recent years. However, due to technical limitations, the morphology of the synthesized MoS2 is unstable. In the CVD process, at least four morphologies of MoS2 are grown on a piece of SiO2/Si substrate. Here, we discuss the reasons for the formation of different MoS2 morphologies via the experiments and the M-CV model. Then a possible morphology evolution mechanism is proposed. Research on the relationship among the flow rate, concentration and morphology shows that in the middle of the substrate, CVD is more stable and can produce high-quality mono-layer MoS2 films. It provides mechanism guidance for improving the stability of CVD and generating the large-size mono-layer MoS2 films.

引用

页码：8107 / 8113

页数：7

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