Nanocrystalline SnO2-based thin films obtained by sol-gel route:: A morphological and structural investigation

被引:38
作者
Acciarri, M
Canevali, C
Mari, CM
Mattoni, M
Ruffo, R
Scotti, R
Morazzoni, F
Barreca, D
Armelao, L
Tondello, E
Bontempi, E
Depero, LE
机构
[1] Univ Milan, INSTM, I-20125 Milan, Italy
[2] Univ Milan, Dipartimento Sci Mat, I-20125 Milan, Italy
[3] Univ Padua, CNR, Ist Sci & Tecnol Mol, I-35131 Padua, Italy
[4] Univ Padua, INSTM, I-35131 Padua, Italy
[5] Univ Brescia, INSTM, I-25123 Brescia, Italy
[6] Univ Brescia, Dipartimento Ingn Meccan, Lab Strutturist Chim, I-25123 Brescia, Italy
关键词
D O I
10.1021/cm031002w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The thermal evolution of sol-gel SnO2-based thin films was explored by investigating their structural and morphological features. Nanostructured SnO2 and Pt-doped SnO2 layers were obtained using tetra(tert-butoxy)tin(IV) and Pt(II) acetlylacetonate as precursors. Films were prepared by spin coating from ethanol solutions with different viscosity. After drying at room temperature, they were annealed in air at 673 and 973 K. The surface morphology was analyzed by scanning electron microscopy, atomic force microscopy, and scanning near-field optical microscopy. The structural characterization was performed by means of glancing incidence X-ray diffraction and microdiffraction. Both drying at room temperature and thermal treatment at 673 K resulted in the formation of holes on the surface and inside the films. Their distribution and average dimension were found to depend mainly on the viscosity of the sol precursor, and on the presence of Pt in the films. After annealing at 973 K, surface segregation of PtOx phases and partial filling of the surface holes occurred. The effects of morphology on the electrical transport properties are discussed on the basis of sensitivity, S, measurements (S = R-air/R-CO, where R-air and R-CO stand for the resistance in air and CO/air, respectively).
引用
收藏
页码:2646 / 2650
页数:5
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