Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

被引：0

作者：

Dokme, I. ^{[1
]}

Tunc, T. ^{[1
]}

Altindal, S. ^{[2
]}

Uslu, I. ^{[3
]}

机构：

[1] Gazi Univ, Fac Gazi Educ, Sci Educ Dept, Ankara, Turkey

[2] Gazi Univ, Fac Arts & Sci, Dept Phys, Ankara, Turkey

[3] Selcuk Univ, Fac Educ, ChemistryEduc Dept, Konya, Turkey

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 08期

关键词：

Au/PVA(Co; Ni-Doped)/n-Si; Polyvinyl alcohol; Dielectric properties; Electrospining technique; ELECTRICAL-CONDUCTIVITY; SERIES RESISTANCE; AC-CONDUCTIVITY; CURRENT-VOLTAGE; FREQUENCY; FILMS; PARAMETERS; COMPOSITE; JUNCTION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta) and the ac electrical conductivity (sigma(ac)) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of epsilon', epsilon '' and tan delta were found a function of temperature. The ac electrical conductivity (sigma(ac)) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.

引用

页码：1225 / 1228

页数：4

共 20 条

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