Recombination current in fully-depleted SOI diodes: Compact model and lifetime extraction

被引：0

作者：

Ernst, T ^{[1
]}

Vandooren, A ^{[1
]}

Cristoloveanu, S ^{[1
]}

Rudenko, TE ^{[1
]}

Colinge, JP ^{[1
]}

机构：

[1] ENSERG, LPCS, F-38016 Grenoble, France

来源：

PERSPECTIVES, SCIENCE AND TECHNOLOGIES FOR NOVEL SILICON ON INSULATOR DEVICES | 2000年 / 73卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Gate-controlled carrier recombination is investigated in fully-depleted SOI devices. It is shown how volume and surface recombination in fully depleted gated diodes can be measured and modeled. The compact model is appropriate for including the carrier recombination in SOI/MOS circuit simulations.

引用

页码：213 / 216

页数：4

共 6 条

[1]

[Anonymous], PHYS TECHNICAL PROBL

[2]

Colinge J. P., 1997, SILICON ON INSULATOR

[3]

Cristoloveanu S., 1995, ELECT CHARACTERIZATI

[4]

Ernst T., 1998, ESSDERC'98. Proceedings of the 28th European Solid-State Device Research Conference, P272

[5]

LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[6] Generation-recombination transient effects in partially depleted SOI transistors: Systematic experiments and simulations [J].

Munteanu, D ;

Weiser, DA ;

Cristoloveanu, S ;

Faynot, O ;

Pelloie, JL ;

Fossum, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) :1678-1683

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