Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)

被引：102

作者：

Mao, Jinhai ^{[1
]}

Huang, Li ^{[1
]}

Pan, Yi ^{[1
]}

Gao, Min ^{[1
]}

He, Junfeng ^{[1
]}

Zhou, Haitao ^{[1
]}

Guo, Haiming ^{[1
]}

Tian, Yuan ^{[1
]}

Zou, Qiang ^{[1
]}

Zhang, Lizhi ^{[1
]}

Zhang, Haigang ^{[1
]}

Wang, Yeliang ^{[1
]}

Du, Shixuan ^{[1
]}

Zhou, Xingjiang ^{[1
]}

Castro Neto, A. H. ^{[2
]}

Gao, Hong-Jun ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Natl Univ Singapore, Dept Phys, Graphene Res Ctr, Singapore 117542, Singapore

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期

基金：

美国国家科学基金会;

关键词：

conduction bands; elemental semiconductors; graphene; intercalation compounds; monolayers; photoelectron spectra; scanning tunnelling microscopy; scanning tunnelling spectroscopy; semiconductor epitaxial layers; semiconductor-insulator boundaries; silicon; valence bands; ELECTRONIC-STRUCTURE; SPECTROSCOPY; SURFACE;

D O I：

10.1063/1.3687190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3687190]

引用

页数：4

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