High luminous efficacy green light-emitting diodes with AlGaN cap layer

被引：79

作者：

Alhassan, Abdullah I. ^{[1
]}

Farrell, Robert M. ^{[1
]}

Saifaddin, Burhan ^{[1
]}

Mughal, Asad ^{[1
]}

Wu, Feng ^{[1
]}

Denbaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93117 USA

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 16期

基金：

美国国家科学基金会;

关键词：

OUTPUT POWER; POLARIZATION; BLUE; GAN;

D O I：

10.1364/OE.24.017868

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm(2)) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes. (C) 2016 Optical Society of America

引用

页码：17868 / 17873

页数：6

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