Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices

被引：0
|
作者：
Kitagata, D. [1 ]
Akushichi, T. [1 ]
Takamura, Y. [2 ]
Shuto, Y. [1 ]
Sugahara, S. [1 ]
机构：
[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa, Japan
[2] Tokyo Inst Technol, Dept Phys Elect, Tokyo, Japan
来源：
2015 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2015年
关键词：
MOSFETS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
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